个人简介

        王娟，理学博士，毕业于中国科学院半导体研究所，现任职于304am永利集团微电子科学与工程专业，并在先进半导体器件及集成技术研究团队（负责人：赵金石教授）从事科研工作，研究方向为化合物半导体光芯片。 曾在SUMCO Phoenix（胜高）从事生产、科研工作，主持并参与多项用于功率器件的硅晶圆的优化项目。
        参与国家重点研发计划、国家自然科学基金等多项科研课题。在Applied Physics Letters、Journal of Applied Physics等国际期刊发表SCI论文多篇。
        致力于新型光电器件产业发展，积极推动新型半导体材料人才培养。

科研项目

1. SUMCO 2021 财年国际创新项目，红磷掺杂的低阻衬底吸杂方式优化，主持，经费数额：121万
2. SUMCO 2019 财年技术改进计划，高性能低压功率器件研究，主持，经费数额：105万

论文

[1] Juan Wang, Guowei Wang, Yingqiang Xu, Junliang Xing, Wei Xiang, Bao Tang,Yan Zhu, Zhengwei Ren, Zhenhong He, and Zhichuan Niu, “Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure”, J. Appl. Phys. 114, 013704 (2013)
[2] Juan Wang, Junliang Xing, Wei Xiang, Guowei Wang, Yingqiang Xu, Zhengwei Ren, Zhichuan Niu, “Investigation of High Hole Mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb Quantum Well Structures Grown by Molecular Beam Epitaxy”, Appl. Phys. Lett. 104, 052111 (2014)
[3] Junliang Xing, Yu Zhang, Yingqiang Xu, Guowei Wang, Juan Wang, Wei Xiang, Haiqiao Ni, Zhengwei Ren, Zhenhong He, and Zhichuan Niu, “High quality above 3μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum-well grown by molecular beam epitaxy”, Chin. Phys. B 23, 017805 (2014)
[4] Guowei Wang, Wei Xiang, Yingqiang Xu, Liang Zhang, Zhenyu Peng, Yanqiu Lv, Junjie Si, Juan Wang, Junliang Xing, Zhengwei Ren, and Zhichuan Niu, “Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices”, J. Semiconductor 34, 114012 (2013)
[5] Ying Yu, Mifeng Li, Jifang He, Yuming He, Yujia Wei, Yu He, Guowei Zha, Xiangjun Shang, Juan Wang, Lijuan Wang, Guowei Wang, Haiqiao Ni, Chaoyang Lu, Zhichuan Niu, “Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire”, Nano Letters 13 1399 (2013 )
[6] Feng Zhan, Haili Wang, Jifang He, Juan Wang, Shesong Huang, Haiqiao Ni and Zhichuan Niu, “Multilayer Antireflection Coating for Triple Junction Solar Cells”, Chin. Phys.  Lett. 28, 047802 (2011)
[7] Yan Zhu, Mifeng Li, Jifang He, Ying Yu, Haiqiao Ni, Yingqiang Xu, Juan Wang, Zhenhong He, and Zhichuan Niu, “GaAs-Based Long-Wavelength InAs Bilayer Quantum Dots Grown by Molecular Beam Epitaxy”, J. Semiconductor 32, 083001 (2011)